New York Power Electronics Manufacturing Consortium to invest over $500 million in the next five years
New York State will partner with over 100 private companies, led by General Electric, in an American venture to develop next generation of SIC materials and processes, Governor Andrew Cuomo announced yesterday. Called the New York Power Electronics Manufacturing Consortium (NY-PEMC), the venture will invest over $500 million in the next five years.
The enterprise will be managed through the newly merged SUNY College of Nanoscale Science and Engineering (CNSE)/SUNY Institute of Technology (SUNYIT) campus based in Albany. GE will be a lead partner in the fab, housed at the CNSE Nano Tech complex (pictured above), which will develop and produce low cost, high performance 6in silicon carbide (SiC) wafers.
All NY-PEMC partner companies will have access to state-of-the-art 6in SiC tools and a baseline process flow, contributed by GE, where they can make their own enhancements in preparation for high volume, cost effective manufacturing. University researchers from around the state will also participate in the program. The idea is to use the state's nanotech facility to attract researchers and private companies to create a high-tech cluster in New York state.
"This partnership will create thousands of new jobs in Upstate New York, tapping into our highly trained workforce and existing centres of high tech research and development," said Cuomo. "With commitment from our partners, we are advancing New York's capability to compete in the international marketplace and make this state the place to develop and manufacture high tech materials. This investment and partnership today will utilise the workforce of tomorrow, creating jobs and increasing long-term investments in New York State."
The partnership is enabled by the START-UP NY tax free initiative, in addition to $135 million in New York State funds provided to CNSE for the establishment of the NY-PEMC facilities, which will attract $365 million in private funds and know-how to support personnel, equipment and process flow, tool installation, facilities and materials for a total five-year investment of $500 million.
Website link: http://www.compoundsemiconductor.net/article/94526-ge-leads-us-consortium-to-develop-next-generation-sic-materials-and-processes.html